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Sell RF Power Field-Effect Transistor[MRF372]

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( Negotiable )

Minimum Order

Place of Origin:

ShenZhen Of China

Price for Minimum Order:

Minimum Order Quantity:

10 Piece

Packaging Detail:

Original Packing Box

Delivery Time:

1-2 Business Days

Supplying Ability:

1000 Piece per Day

Payment Type:

Other, Western Union, T/T

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Novelty Electronics Limited

China

Free Member

Contact Person Mr. Allen

Sungang West Rd Rd, Shenzhen, Guangdong

Contact Now

Description

The RF MOSFET Line

N–Channel Enhancement–Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies

from **0 to **0 MHz. The high gain and broadband performance of this

device make it ideal for large–signal, common source amplifier applications in

*2 volt transmitter equipment.

• Typical Narrowband Two–Tone *@********************

f2 = **3 MHz, *2 Volts

Output Power — **0 Watts PEP

Power Gain — *7 dB

Efficiency — *6%

IMD — –*5 dBc

• Typical Broadband Two–Tone Performance

Sell RF Power Field-Effect Transistor[MRF372]

Novelty Electronics Limited

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Sell RF Power Field-Effect Transistor[MRF372]

Novelty Electronics Limited

Description

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